Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348921
Reference12 articles.
1. Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region
2. GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs
3. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
4. MBE growth and properties of (100)- and (111)-oriented GaInP/AlInP quantum wells on GaAs substrates
5. Growth of InGaP on GaAs using gas-source molecular-beam epitaxy
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1. Gas source MBE grown Al0.52In0.48P photovoltaic detector;Journal of Crystal Growth;2011-05
2. Ga-In-P (Gallium-Indium-Phosphorus);Non-Ferrous Metal Systems. Part 1;2006
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4. Electron transport through strongly coupled AlInP/GaInP superlattices;Applied Physics Letters;2002-11-04
5. Strain-induced modifications of the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells;IEEE Journal of Quantum Electronics;1998
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