Broadband, High-Linearity Switches for Millimeter-Wave Mixers Using Scaled SOI CMOS
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA
Funder
Defense Advanced Research Projects Agency (DARPA) SPAR Program managed by Dr. T. Hancock through Cooperative
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/8782712/9733783/09854919.pdf?arnumber=9854919
Reference52 articles.
1. Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits
2. An 18-dBm, 57 to 85-GHz, 4-stack FET Power Amplifier in 45-nm SOI CMOS
3. A 17.7–20.2-GHz 1024-Element K-Band SATCOM Phased-Array Receiver With 8.1-dB/K G/T, ±70° Beam Scanning, and High Transmit Isolation
4. Passive coupled-switched-capacitor-resonator-based reconfigurable RF front-end filters and duplexers
5. A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna
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