An 18-dBm, 57 to 85-GHz, 4-stack FET Power Amplifier in 45-nm SOI CMOS-Reference-Cited by-同舟云学术

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An 18-dBm, 57 to 85-GHz, 4-stack FET Power Amplifier in 45-nm SOI CMOS

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE/MTT-S International Microwave Symposium - IMS
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Author:

Ning Kang,Buckwalter James F

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8417183/8439129/08439649.pdf?arnumber=8439649

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact 28-GHz Transmitter Front-End with Co-Optimized Wideband Chip-Antenna Interface Achieving 18.5-dBm P1dB and 1.0-W/mm² Power Density for Phased Array Systems;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A 115–151 GHz Multifeed Active Antenna With In-Antenna Power Combining;IEEE Transactions on Antennas and Propagation;2024-04

3. Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band;IEEE Transactions on Microwave Theory and Techniques;2023-05

4. A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2023-05

5. A High-Efficiency E-band Power Amplifier with Optimized Output Matching Network in a 28-nm Bulk CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

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