An 18-dBm, 57 to 85-GHz, 4-stack FET Power Amplifier in 45-nm SOI CMOS
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8417183/8439129/08439649.pdf?arnumber=8439649
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band;IEEE Transactions on Microwave Theory and Techniques;2023-05
2. A 124-to-152-GHz Power Amplifier Exploiting Chebyshev-Type Two-Section Wideband and Low-Loss Power-Combining Technique in 28-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2023-05
3. A 38-48 GHz Power Amplifier with 23-dB Gain 18.5-dBm Psat and 28% PAE in 65-nm CMOS;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
4. Analysis and Design of Capacitive Voltage Distribution Stacked MOS Millimeter-Wave Power Amplifiers;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-09
5. A novel stair‐finger grid type transistor for high‐performance millimeter‐wave power amplifier;Microwave and Optical Technology Letters;2022-07-09
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