A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz-Reference-Cited by-同舟云学术

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A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

Published:2008-08 Issue:8 Volume:29 Page:824-826
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yifeng,Jacob-Mitos Matt,Moore Marcia L.,Heikman Sten

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4571121/04571123.pdf?arnumber=4571123

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3. A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2024-06

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5. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV _TH Transients in p-GaN Gate Power HEMTs;IEEE Transactions on Electron Devices;2024-03

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