GaAs Schottky diodes for THz mixing applications-Reference-Cited by-同舟云学术

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GaAs Schottky diodes for THz mixing applications

Published:1992 Issue:11 Volume:80 Page:1827-1841
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Crowe T.W.,Mattauch R.J.,Roser H.P.,Bishop W.L.,Peatman W.C.B.,Liu X.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/5/4457/00175258.pdf?arnumber=175258

Cited by 98 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Sub-terahertz Si CMOS Based Emitters and Detectors;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27

3. Compact terahertz devices based on silicon in CMOS and BiCMOS technologies;Opto-Electronics Review;2024-01-03

4. Fabrication and characterization of low barrier height InAs/Ga_xIn_1-xAs/InAs heterostructure diodes toward millimeter-wave detection;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17

5. Input Power and Effective Area in Terahertz Detector Measurement: A Review;IEEE Access;2023

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