Fabrication and characterization of low barrier height InAs/Ga<sub>x</sub>In<sub>1-x</sub>As/InAs heterostructure diodes toward millimeter-wave detection-Reference-Cited by-同舟云学术

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Fabrication and characterization of low barrier height InAs/Ga_xIn_1-xAs/InAs heterostructure diodes toward millimeter-wave detection

Published:2023-09-17 Issue: Volume: Page:
ISSN:
Container-title:2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Author:

Inoue Moto¹,Koyama Masatoshi¹,Maemoto Toshihiko¹,Sasa Shigehiko¹

Affiliation:

1. Osaka Institute of Technology, 5-16-1 Ohmiya, Asahi-ku,Nanomaterials and Microdevices Research Center,Osaka,Japan,535-8585

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10298848/10298849/10299182.pdf?arnumber=10299182

Reference5 articles.

1. High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

2. Novel Terahertz-Wave Detector: Fermi-Level Managed Barrier Diode;ito;Appl Phys Exp,2016

3. Crystal rectifiers;torrey;McGraw-Hill Book Company Inc,0

4. Fermi‐level managed barrier diode for broadband and low‐noise terahertz‐wave detection

5. GaAs Schottky diodes for THz mixing applications

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