Charge collection in SOI capacitors and circuits and its effect on SEU hardness-Reference-Cited by-同舟云学术

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Charge collection in SOI capacitors and circuits and its effect on SEU hardness

Published:2002-12 Issue:6 Volume:49 Page:2937-2947
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Schwank J.R.¹,Dodd P.E.¹,Shaneyfelt M.R.¹,Vizkelethy G.¹,Draper B.L.¹,Hill T.A.¹,Walsh D.S.¹,Hash G.L.¹,Doyle B.L.¹,McDaniel F.D.

Affiliation:

1. Sandia Nat. Labs., Albuquerque, NM, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/25186/01134244.pdf?arnumber=1134244

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Single-Event Transient (SET) Tolerant Dynamic Bias Comparator in 65-nm CMOS;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06

2. Charge Collection in SOI Microdosimeters and Their Radiation Hardness;IEEE Transactions on Nuclear Science;2023-04

3. Characterization of a novel radiation hardened by design (RHD14) bit-cell based on 20-nm FinFET technology using TCAD simulations;Microelectronics Reliability;2023-03

4. Temperature dependence of single-event transient response in devices with selective-buried-oxide structure;Acta Physica Sinica;2019

5. Improved Single-Event Transient Hardness in Tunnel-Diode Body-Contact SOI nMOS;IEEE Transactions on Nuclear Science;2017-10

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