An analytical deep submicron MOS device model considering velocity overshoot behavior using energy balance equation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/8655/00381981.pdf?arnumber=381981
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A deep sub-micrometer NMOSFET non-local transport model for ESD effect;Acta Physica Sinica;2006
2. Silicon Devices and Circuits;Low Temperature Electronics;2001
3. Analytical model for subthreshold current in short-channel fully depleted SOI MOSFETs incorporating velocity overshoot;SPIE Proceedings;2000-10-24
4. Assessment of approximate balance equation transport models used for submicron silicon device modelling;International Journal of Electronics;1999-08
5. Deep-submicrometre fully-depleted SOI MOSFET drain current model for digital/analogue circuit simulation;International Journal of Electronics;1998-03
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