Deep-submicrometre fully-depleted SOI MOSFET drain current model for digital/analogue circuit simulation
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/002072198134779
Reference24 articles.
1. An analytical drain current model for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices
2. An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating
3. Modeling of hot-carrier-stressed characteristics of nMOSFETs
4. Unified physical I-V model of fully depleted SOI/MOSFETs for analog/digital circuit simulation
5. Scaling constraints imposed by self-heating in submicron SOI MOSFET's
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical modeling and simulation of a linearly graded binary metal alloy gate nanoscale cylindrical MOSFET for reduced short channel effects;Journal of Computational Electronics;2014-04-16
2. Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application;IEEE Transactions on Electron Devices;2012-12
3. Analytical I–V model of SOI and SON MOSFETs: a comparative analysis;International Journal of Electronics;2011-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3