A numerical study of the use of C-V characteristics to extract the doping density of CIGS absorbers
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7701171/7749395/07750043.pdf?arnumber=7750043
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigating Mesa Structure Impact on C-V Measurements;IEEE Access;2024
2. Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3;ACS Applied Materials & Interfaces;2023-09-21
3. Over 100 mV VOC Improvement for Rear Passivated ACIGS Ultra‐Thin Solar Cells;Advanced Functional Materials;2023-07-20
4. Surface Engineering of Submicron Cu(In,Ga)Se2 for High-Efficient Zn(O,S)-Based Solar Cells with Lower Light Soaking Effects;ACS Applied Energy Materials;2023-02-08
5. Charge Carrier Lifetime Fluctuations and Performance Evaluation of Cu(In,Ga)Se 2 Absorbers via Time‐Resolved‐Photoluminescence Microscopy;Advanced Energy Materials;2021-12-15
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