Layout-Dependent Vertical and In-Plane Leakage Current Reduction of Organic Thin-Film Transistors by Layer Contact Restriction
Author:
Affiliation:
1. Kyoto University,Graduate School of Informatics,Yoshida-hon-machi, Sakyo,Kyoto 606-8501,Japan
2. National Institute of Advanced Industrial Science and Technology (AIST)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9898143/9898103/09898196.pdf?arnumber=9898196
Reference23 articles.
1. Ultralow-power organic complementary circuits
2. Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-b:2‘,3‘-f]chalcogenopheno[3,2-b]chalcogenophenes, and Their Application to Field-Effect Transistors
3. Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability
4. High Performance Pentacene Thin Film Transistors with a PVA Gate Dielectric
5. High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric
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