High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric-Reference-Cited by-同舟云学术

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High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric

Published:2017-07-10 Issue:2 Volume:111 Page:023501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ma Y. X.¹^ORCID,Han C. Y.²,Tang W. M.³,Lai P. T.¹

Affiliation:

1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong Island 999077, Hong Kong

2. School of Microelectronics, Xi'an Jiao Tong University, Xi'an 710049, China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong

Funder

University of Hong Kong (HKU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993157

Reference22 articles.

1. Organic thin-film transistors

2. Recent Progress in Organic Electronics: Materials, Devices, and Processes

3. Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths

4. MoO3 Modification Layer to Enhance Performance of Pentacene-OTFTs With Various Low-Cost Metals as Source/Drain Electrodes

5. High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced charge trapping characteristics through composite high-k material phase separation;Applied Physics Letters;2023-11-06

2. Layout-Dependent Vertical and In-Plane Leakage Current Reduction of Organic Thin-Film Transistors by Layer Contact Restriction;2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS);2022-03-21

3. Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric;Materials;2022-03-18

4. Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric;Organic Electronics;2022-03

5. Admittance of Pentacene- Based Mis-Structures with Two-Layer Insulator SiO2–Al2O3;Russian Physics Journal;2021-11

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