Investigation and SPICE Compact Model of Spacer Region for Static Characteristics of 3-D NAND Flash Memories
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9204488/09167430.pdf?arnumber=9167430
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Accurate SPICE Model for Cells With Tube-Type Poly-Si Channel in Cell Strings of Vertical NAND Flash Memory;IEEE Transactions on Electron Devices;2023-10
2. String-level compact modeling for dynamic operation and transient analysis of 3D charge trapping flash memory;Solid-State Electronics;2023-06
3. Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile;IEEE Access;2022
4. Distinguishing capture cross-section parameter between GIDL erase compact model and TCAD;Japanese Journal of Applied Physics;2021-11-30
5. Analysis and Compact Modeling of Fast Detrapping From Bandgap-Engineered Tunneling Oxide in 3-D NAND Flash Memories;IEEE Transactions on Electron Devices;2021-07
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