String-level compact modeling for dynamic operation and transient analysis of 3D charge trapping flash memory-Reference-Cited by-同舟云学术

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String-level compact modeling for dynamic operation and transient analysis of 3D charge trapping flash memory

Published:2023-06 Issue: Volume:204 Page:108655
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cho Sunghwan,Choi Byoungdeog

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. H. Kim, S.-J. Ahn, Y. G. Shin, K. Lee, E. Jung, Evolution of NAND flash memory: From 2D to 3D as a storage market leader, in 2017 IEEE International Memory Workshop (IMW), 2017: IEEE, pp. 1-4.

2. Reviewing the evolution of the NAND flash technology;Monzio Compagnoni;Proc IEEE,2017

3. R. Micheloni, S. Aritome, L. Crippa, Array architectures for 3-D NAND flash memories, Proceedings of the IEEE, vol. 105, no. 9, pp. 1634-1649, 2017, doi: 10.1109/jproc.2017.2697000.

4. 3-D NAND technology achievements and future scaling perspectives;Goda;IEEE Trans Electron Devices,2020

5. Three-dimensional nand flash architecture design based on single-crystalline STacked ARray;Kim;IEEE Trans Electron Devices,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical Charge Loss Induced by Defect Coupling at SiO₂/Si₃N₄ Interface in 3D NAND Flash Memory;2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT);2023-07-21

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