Impact of Thermal Boundary Resistance on the Thermal Design of GaN-on-Diamond HEMTs-Reference-Cited by-同舟云学术

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Impact of Thermal Boundary Resistance on the Thermal Design of GaN-on-Diamond HEMTs

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
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Author:

Guo Huaixin,Kong Yuechan,Chen Tangsheng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8795274/8811008/08811048.pdf?arnumber=8811048

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT;Microelectronics Reliability;2024-01

2. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review;Micromachines;2023-11-08

3. Gallium-Nitride (GaN) Transistor Design for Transient-Overload Power Applications;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

4. Diamond/GaN HEMTs: Where from and Where to?;Materials;2022-01-06

5. Interface Engineering Enabling Next Generation GaN-on-Diamond Power Devices;Journal of Electronic Materials;2021-05-31

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