Gallium-Nitride (GaN) Transistor Design for Transient-Overload Power Applications
Author:
Affiliation:
1. Duke University,Dept. Electrical & Computer Engineering,Durham,US
2. Medical School, Duke University,Dept. Electrical & Computer Engineering,Durham,US
3. School of Medicine, Duke University,Department of Psychiatry and Behavior Sciences,Durham,US
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131164.pdf?arnumber=10131164
Reference24 articles.
1. A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters
2. Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
3. Overview and Recent Progress on the Development of Compact GaN- based Power Converters;Quay
4. 10 kW High Efficiency Compact GaN-Based DC/DC Converter Design
5. Design of a compact, ultra high efficient isolated DC-DC converter utilizing GaN devices
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