Impact of Irradiation Side on Muon-Induced Single-Event Upsets in 65-nm Bulk SRAMs-Reference-Cited by-同舟云学术

Impact of Irradiation Side on Muon-Induced Single-Event Upsets in 65-nm Bulk SRAMs

Published:2024-04 Issue:4 Volume:71 Page:912-920
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Deng Yifan¹^ORCID,Watanabe Yukinobu²^ORCID,Manabe Seiya¹,Liao Wang³^ORCID,Hashimoto Masanori⁴^ORCID,Abe Shin-Ichiro⁵^ORCID,Tampo Motonobu⁶,Miyake Yasuhiro⁶^ORCID

Affiliation:

1. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan

2. Faculty of Engineering Sciences, Kyushu University, Fukuoka, Japan

3. School of System Engineering, Kochi University of Technology, Kochi, Japan

4. Graduate School of Informatics, Kyoto University, Kyoto, Japan

5. Research Group for Radiation Transport Analysis, Japan Atomic Energy Agency, Ibaraki, Japan

6. Muon Science Laboratory, High Energy Accelerator Research Organization (KEK), Tsukuba, Japan

Funder

Grant-in-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/23/10504904/10474031.pdf?arnumber=10474031

Reference24 articles.

1. Muon-Induced Single Event Upsets in Deep-Submicron Technology

2. Effects of scaling on muon-induced soft errors

3. Bias dependence of muon-induced single event upsets in 28 nm static random access memories

4. Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

5. Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model