Poly-gate sidewall oxidation induced submicrometer MOSFET degradation-Reference-Cited by-同舟云学术

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Poly-gate sidewall oxidation induced submicrometer MOSFET degradation

Published:1989-08 Issue:8 Volume:10 Page:367-369
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Pfiester J.R.,Parrillo L.C.,Hayden J.D.,See Y.-C.,Fejes P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1380/00031759.pdf?arnumber=31759

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics;Journal of Applied Physics;2015-11-28

2. An analytical model for the effect of graded gate oxide on the channel electric field in MOSFETs with lightly doped drain structure;Solid-State Electronics;1997-04

3. Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region;Japanese Journal of Applied Physics;1997-03-30

4. Thermally Grown Silicon Oxide;Gate Dielectrics and MOS ULSIs;1997

5. Repair of Plasma Etch Related Gate Perimeter Damage Using Low Temperature Oxidation;Journal of The Electrochemical Society;1996-02-01

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