Design optimal built-in snubber in trench field plate power MOSFET for superior EMI and efficiency performance-Reference-Cited by-同舟云学术

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Design optimal built-in snubber in trench field plate power MOSFET for superior EMI and efficiency performance

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Chen Jingjing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7274904/7292241/07292361.pdf?arnumber=7292361

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topological Equivalence of VSI and CSI Commutation Cells and Its Application to Switching Resonance Analysis and Damper Design;IEEE Transactions on Transportation Electrification;2023

2. Design Optimization of RC Snubber Circuit for A SiC Power Module;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

3. Improvement of Q rr-I DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side;Japanese Journal of Applied Physics;2021-12-07

4. On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters;Energies;2021-09-17

5. Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation;Electronics;2019-05-08

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