Design Optimization of RC Snubber Circuit for A SiC Power Module
Author:
Affiliation:
1. Fudan University,Institute of Future Lighting, Academy for Engineering and Technology,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873263.pdf?arnumber=9873263
Reference14 articles.
1. A double-end sourced multi-chip improved wire-bonded SiC MOSFET power module design
2. Overvoltage and Oscillation Suppression Circuit With Switching Losses Optimization and Clamping Energy Feedback for SiC MOSFET
3. A Medium Power SiC Module with Integrated Active Snubber for Lowest Switching Losses
4. Design optimal built-in snubber in trench field plate power MOSFET for superior EMI and efficiency performance
5. Design of RCD snubber considering wiring inductance for MHz-switching of SiC-MOSFET;yamashita;2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL) COMPEL,2017
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1. Fundamental Modeling of the Switching Transition in High-Speed Power Electronics;IEEE Access;2024
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