Unclamped inductive switching dynamics in lateral and vertical power DMOSFETs-Reference-Cited by-同舟云学术

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Unclamped inductive switching dynamics in lateral and vertical power DMOSFETs

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Container-title:Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370)
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Author:

Chinnaswamy K.,Khandelwal P.,Trivedi M.,Shenai K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6470/17388/00801639.pdf?arnumber=801639

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Charge Plasma Based Dual Buried Gates Power MOSFET with Improved Figure of Merits;Silicon;2024-05-31

2. Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13

3. New Energy Transformation Model for the Unclamped Inductive Switching (UIS) Test;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20

4. Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test;IEEE Transactions on Device and Materials Reliability;2020-06

5. A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device;IEEE Journal of the Electron Devices Society;2018

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