Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS-Reference-Cited by-同舟云学术

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Effect of Epitaxial Layer Parameters on the Avalanche Energy of Power VDMOS

Published:2022-05-13 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 5th International Conference on Electronics Technology (ICET)
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Author:

Li Changze¹,Ren Min¹,Tao Lin¹,Zhang Xin²,Yu Shiheng³,Lai Xinzhang³,Zhuo Ningze³,Zhang Bo¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,Sichuan,P. R. China

2. Wuxi China Resources Huajing Microelectronics Co.LTD,Wuxi China Resources Huajing Microelectronics Co.LTD,Wuxi,Jiangsu,P. R. China

3. Jiangsu Changjing Electronics Technology Co.LTD,Jiangsu Changjing Electronics Technology Co.LTD,Nanjing,Jiangsu,P. R. China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9823394/9823964/09824291.pdf?arnumber=9824291

Reference6 articles.

1. Failure Analysis of Superjunction VDMOS Under UIS Condition

2. Electrothermal effects during unclamped inductive switching (UIS) of power MOSFET's

3. Current Induced Avalanche in Epitaxial Structures

4. Energy limits for unclamped inductive switching in high-voltage planar and SuperJunction power MOSFETs

5. Unclamped inductive switching dynamics in lateral and vertical power DMOSFETs

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