Effect of NiOx Field Ring Deposition Condition on Characteristics of Ga2O3 Schottky Diodes
Author:
Affiliation:
1. Xidian University,State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics,Xi’an,China,710071
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10268109/10268095/10268236.pdf?arnumber=10268236
Reference23 articles.
1. Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
2. Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination
3. Hexagonally-arranged-nanoporous and continuous NiO films with varying electrical conductivity
4. Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
5. Ultra-wide bandgap semiconductor Ga2O3 power diodes
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