Effect of Extended Back Gate in GaAs Based DG- JLMOSFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of Extended Back Gate in GaAs Based DG- JLMOSFET

Published:2022-12-17 Issue: Volume: Page:
ISSN:
Container-title:2022 25th International Conference on Computer and Information Technology (ICCIT)
language:
Short-container-title:

Author:

Mashrur Wasi¹,Salim Shahriar Bin¹,Sultana Sunjida¹,Hasan Md. Soyaeb¹,Akhter Uz Zaman Md.¹,Zahidur Rahman K M¹,Rafiqul Islam Md.²

Affiliation:

1. Military Institute of Science and Technology (MIST),Electrical, Electronic and Communication Engineering (EECE),Dhaka,Bnagladesh,1216

2. Khulna University of Enginnering and Technology(KUET),Electrical and Electronic Engineering (EEE),Khulna,Bangladesh,9203

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10054512/10054643/10055683.pdf?arnumber=10055683

Reference13 articles.

1. Effect of Band-to-Band Tunneling on Junctionless Transistors

2. The Effect of Gate Length on SOI- MOSFETs Operation;baedia;Advances in Applied Science Research,2010

3. Symmetric Operation in an Extended Back Gate JLFET for Scaling to the 5-nm Regime Considering Quantum Confinement Effects

4. Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor

5. Emerging silicon and non-silicon nanoelectronic devices: opportunities and challenges for future high-performance and low-power computational applications (invited paper)

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP