A 4-ns 4K*1-bit two-port BiCMOS SRAM-Reference-Cited by-同舟云学术

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A 4-ns 4K*1-bit two-port BiCMOS SRAM

Published:1988 Issue:5 Volume:23 Page:1030-1040
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yang T.-S.,Horowitz M.A.,Wooley B.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/290/00005921.pdf?arnumber=5921

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable parallel VLSI processor for dynamic control of intelligent robots;IEE Proceedings - Computers and Digital Techniques;1996

2. High-Performance Bicmos Circuit Structures;High-Performance Digital VLSI Circuit Design;1996

3. Differential BiCMOS logic circuits: fault characterization and design-for-testability;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;1995-09

4. Novel high speed circuit structures for BiCMOS environment;IEEE Journal of Solid-State Circuits;1995-05

5. A source sensing technique applied to SRAM cells;IEEE Journal of Solid-State Circuits;1995-04

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