A source sensing technique applied to SRAM cells-Reference-Cited by-同舟云学术

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A source sensing technique applied to SRAM cells

Published:1995-04 Issue:4 Volume:30 Page:500-511
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

O'Connor K.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/8575/00375972.pdf?arnumber=375972

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A New Single-Port Five-Transistor SRAM Cell Design for Signal Processing Systems;2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM);2019-10

2. CMOS EIGHT-TRANSISTOR MEMORY CELL FOR LOW-DYNAMIC-POWER HIGH-SPEED EMBEDDED SRAM;Journal of Circuits, Systems and Computers;2008-10

3. Low Power 260k Color TFT LCD Driver IC;ETRI Journal;2003-10-14

4. Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems;Nanoscaled Semiconductor-on-Insulator Structures and Devices

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