A short circuit protection method based on a gate charge characteristic-Reference-Cited by-同舟云学术

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A short circuit protection method based on a gate charge characteristic

Published:2014-05 Issue: Volume: Page:
ISSN:
Container-title:2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)
language:
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Author:

Horiguchi Takeshi,Kinouchi Shin-ichi,Nakayama Yasushi,Oi Takeshi,Urushibata Hiroaki,Okamoto Shoji,Tominaga Shinji,Akagi Hirofumi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6857936/6869559/06869909.pdf?arnumber=6869909

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of IGBT Intelligent Gate Drive and Protection Strategies;IEEE Transactions on Power Electronics;2024-06

2. Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26

3. Rover Circuit Protection: A Holistic and Comprehensive Approach;TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON);2023-10-31

4. Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage During IGBT Conduction;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Overcurrent Detection Method by Monitoring Gate Voltage While Periodically Repeating Discharging and Charging of Constant Gate Charge in IGBTs;2022 IEEE 7th Southern Power Electronics Conference (SPEC);2022-12-05

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