Overcurrent Detection Method by Monitoring Gate Voltage While Periodically Repeating Discharging and Charging of Constant Gate Charge in IGBTs
Author:
Affiliation:
1. The University of Tokyo,Tokyo,Japan
2. Kyusyu Institute of Technology,Fukuoka,Japan
Funder
JST-Mirai Program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10058186/10058061/10058332.pdf?arnumber=10058332
Reference11 articles.
1. A short circuit protection method based on a gate charge characteristic
2. A novel fault detection circuit for short-circuit faults of IGBT
3. Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge
4. Application of the Rogowski Coil Current Sensor for Overcurrent Detection and Blocking in Power Conversion Systems
5. Comparison between desaturation sensing and Rogowski coil current sensing for shortcircuit protection of 1.2 kV, 300 A SiC MOSFET module
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fully Integrated Overcurrent Protection Method During SiC MOSFET Conduction;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26
2. Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage During IGBT Conduction;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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