Recent advances and future prospects on GaN-based power devices

Author:

Ueda Tetsuzo

Publisher

IEEE

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. DC and RF performance of HR Si(111)-based AlGaN/GaN MIS-HEMT with a symmetrical multi-finger grid array structure for 5G N28 700MHz low-bias-control applications;Materials Science in Semiconductor Processing;2023-09

2. A Tutorial on Double Pulse Test of Silicon and Silicon Carbide MOSFETs;2023 IEEE Workshop on Electrical Machines Design, Control and Diagnosis (WEMDCD);2023-04-13

3. Hardware Evaluation for GaN-Based Single-Phase Five-Level Inverter;IEEE Access;2023

4. The Parametric Array Speaker: A Review;Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering;2023

5. An analysis of the power transistors of electric vehicle inverters: present and the future trends;2022 IEEE 1st International Conference on Cognitive Mobility (CogMob);2022-10-12

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