Recent advances and future prospects on GaN-based power devices
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6857936/6869559/06869874.pdf?arnumber=6869874
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses;Springer Proceedings in Physics;2024
2. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14
3. DC and RF performance of HR Si(111)-based AlGaN/GaN MIS-HEMT with a symmetrical multi-finger grid array structure for 5G N28 700MHz low-bias-control applications;Materials Science in Semiconductor Processing;2023-09
4. A Tutorial on Double Pulse Test of Silicon and Silicon Carbide MOSFETs;2023 IEEE Workshop on Electrical Machines Design, Control and Diagnosis (WEMDCD);2023-04-13
5. Hardware Evaluation for GaN-Based Single-Phase Five-Level Inverter;IEEE Access;2023
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