DC and RF performance of HR Si(111)-based AlGaN/GaN MIS-HEMT with a symmetrical multi-finger grid array structure for 5G N28 700MHz low-bias-control applications

Author:

Guan He,Li Wentao,Tong Xin,Shen Guiyu,Li Feng,Zhang Hao

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. A roadmap for future wide bandgap semiconductor power electronics;Okumura;MRS Bull.,2015

2. DARPA's nitride electronic next generation technology program;Albrecht,2010

3. Recent advances and future prospects on GaN-based power devices;Ueda,2014

4. Ultra-wide band gap materials for high frequency applications;Razzak,2018

5. GaN on Si technologies for power switching devices;Ishida;IEEE Trans. Electron. Dev.,2013

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