Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology-Reference-Cited by-同舟云学术

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Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

Published:1997-05 Issue:5 Volume:44 Page:715-722
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Le Tron B.,Hashim M.D.R.,Ashburn P.,Mouis M.,Chantre A.,Vincent G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/12340/00568031.pdf?arnumber=568031

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