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300 GHz Integrated Heterodyne Receiver and Transmitter With On-Chip Fundamental Local Oscillator and Mixers

  • Published:2014 Issue: Volume: Page:1-10
  • ISSN:2156-342X
  • Container-title:IEEE Transactions on Terahertz Science and Technology
  • language:
  • Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Kim Sooyeon,Yun Jongwon,Yoon Daekeun,Kim Moonil,Rieh Jae-Sung,Urteaga Miguel,Jeon Sanggeun

Funder

ICT R&D program of MSIP/IITP [12-911-01-101, Solid-State Terahertz Technology Development for Security Imaging Systems]

National Research Foundation of Korea (NRF)

Samsung Electronics Company, Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

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1. A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. A 205–273-GHz Frequency Multiplier Chain (×6) With 9-dBm Output Power and 1.92% DC-to-RF Efficiency in 0.13-µm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-07

3. A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

4. Characterising the Photonic-Assisted Coherent Free-Space Link of Sub-THz Data Transmission;IEEE Access;2023

5. A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface;IEEE Journal of Solid-State Circuits;2022-10
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