GBRHQ-14T: Gate-Boosted Radiation Hardened Quadruple SRAM Design
Author:
Affiliation:
1. Indian Institute of Technology,Gandhinagar,India
Funder
Science and Engineering Research Board (SERB)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117893.pdf?arnumber=10117893
Reference10 articles.
1. Power optimized SRAM cell with high radiation hardened for aerospace applications
2. Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology
3. Soft-Error-Aware Read-Decoupled SRAM With Multi-Node Recovery for Aerospace Applications
4. A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets
5. We-quatro: Radiation-hardened sram cell with parametric process variation tolerance;kim;IEEE Transactions on Nuclear Science,2017
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1. Soft Error Immune with Enhanced Critical Charge SIC14T SRAM Cell for Avionics Applications;2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration (VLSI-SoC);2023-10-16
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