Band Engineering of Magnetic (Ga,Mn)As Semiconductors by Phosphorus Doping-Reference-Cited by-同舟云学术

Band Engineering of Magnetic (Ga,Mn)As Semiconductors by Phosphorus Doping

Published:2023-11 Issue:11 Volume:59 Page:1-6
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Yastrubchak Oksana¹^ORCID,Riney Logan²,Powers William²,Tataryn Nataliia¹,Mamykin Sergii¹^ORCID,Kondratenko Olga¹,Romanyuk Volodymyr¹,Borkovska Lyudmyla¹,Kolomys Oleksandr¹,Khomenkova Larysa¹,Wang Jiashu²,Liu Xinyu²,Furdyna Jacek K.²,Assaf Badih A.²

Affiliation:

1. V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

2. Department of Physics and Astronomy, University of Notre Dame, Notre Dame, IN, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/20/10294220/10155476-aam.pdf

Reference39 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Multilayer Diffraction Gratings Al/GaAs as Polaritonic Photodetectors

3. Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

4. On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E1 and E1 + Δ1 optical transitions

5. Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs

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1. Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers;Scientific Reports;2023-10-12

2. Modification of Magnetic Semiconductors by Phosphorus Doping;2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP);2023-09-10

3. Investigation of Valence Band Dispersion in (Ga, Mn)(Bi, As) Epitaxial Nanolayers;2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP);2023-09-10

4. Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers;2023-07-27