Scaling of InP HEMT Cascode Integrated Circuits to THz Frequencies

Author:

Deal W. R.,Leong K.,Mei X. B.,Sarkozy S.,Radisic V.,Lee J.,Liu P. H.,Yoshida W.,Zhou J.,Lange M.

Publisher

IEEE

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 670-GHz Cascode Circuits Based on InGaAs Metamorphic High-Electron-Mobility Transistors;IEEE Transactions on Terahertz Science and Technology;2021

2. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review;AEU - International Journal of Electronics and Communications;2018-09

3. 243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology;International Journal of Microwave and Wireless Technologies;2014-02-25

4. Millimeter-Wave Characterization of Silicon Devices under Small-Signal Regime;Microwave De-embedding;2014

5. Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication;2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013);2013-10

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