Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication-Reference-Cited by-同舟云学术

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Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013)
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Author:

Schlechtweg Michael¹,Tessmann Axel¹,Leuther Arnulf¹,Massler Hermann¹,Wagner Sandrine¹,Aidam Rolf¹,Rosenzweig Josef¹,Ambacher Oliver¹,Kallfass Ingmar²,Lewark Ulrich J.²,Sommer Rainer³,Wahlen Alfred³,Stanko Stephan³,Ender Joachim³

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany

2. Institut für Hochfrequenztechnik und Elektronik, Karlsruhe Institute of Technology (KIT), Kaiserstrasse 12, 76131 Karlsruhe, Germany

3. Fraunhofer Institute for High Frequency Physics and Radar Techniques FHR, Fraunhoferstrasse 20, 53343 Wachtberg, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6679354/6685224/06685251.pdf?arnumber=6685251

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of DC-RF and breakdown behaviour in L g  = 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications;AEU - International Journal of Electronics and Communications;2018-02

2. Two-dimensional materials and their prospects in transistor electronics;Nanoscale;2015

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