10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process-Reference-Cited by-同舟云学术

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10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
language:
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Author:

Gasmi Ahmed,El Kaamouchi Majid,Poulain Julien,Wroblewski Bertrand,Lecourt Francois,Dagher Gulnar,Frijlink Peter,Leblanc Remy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8211425/8240418/08240431.pdf?arnumber=8240431

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect;Electronics;2024-07-03

2. Ka-Band GaN Power Amplifier with Integrated DC Supply Switch and RF Switch;2024 25th International Microwave and Radar Conference (MIKON);2024-07-01

3. A 24–30 GHz GaN Front-End MMIC with Coupled-Resonator based Transmit/Receive Switch for 5G Millimeter-Wave Applications;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. Broadband Low-Noise Ka-Band Front-End MMIC in a 0.15-µm GaN-on-SiC HEMT Technology;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

5. Design and development of a Ku-Band MMIC transmit receive front end chip;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

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