W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology-Reference-Cited by-同舟云学术

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W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Published:2014-10 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
language:
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Author:

Margomenos A.,Kurdoghlian A.,Micovic M.,Shinohara K.,Moyer H.,Regan D. C.,Grabar R. M.,McGuire C.,Wetzel M. D.,Chow D. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6971855/6978513/06978585.pdf?arnumber=6978585

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. $W$-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications;IEEE Transactions on Microwave Theory and Techniques;2024

2. W-Band GaN HEMT Frequency Multipliers;IEEE Transactions on Microwave Theory and Techniques;2023-10

3. V- and W-band GaN MMIC Switches;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. W-Band GaN HEMT Switch Using the State-Dependent Concurrent Matching Method;Electronics;2023-05-15

5. AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches;IEEE Access;2023

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