V- and W-band GaN MMIC Switches
Author:
Affiliation:
1. University of Colorado Boulder,ECEE Department,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288636.pdf?arnumber=10288636
Reference10 articles.
1. Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz
2. A high-power, low-loss W-band SPDT switch using SiGe PIN diodes
3. W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology
4. High-performance W-band SiGe RFICs for passive millimeter-wave imaging
5. On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs
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1. The Evolution of Applications, Hardware Design, and Channel Modeling for Terahertz (THz) Band Communications and Sensing: Ready for 6G?;Proceedings of the IEEE;2024
2. 46–102 GHz GaN Balanced Cascode Amplifier-Isolator;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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