160-270-GHz InP HEMT MMIC Low-Noise Amplifiers-Reference-Cited by-同舟云学术

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160-270-GHz InP HEMT MMIC Low-Noise Amplifiers

Published:2012-10 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Varonen M.,Larkoski P.,Fung A.,Samoska L.,Kangaslahti P.,Gaier T.,Lai R.,Sarkozy S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6340039/6340047/06340058.pdf?arnumber=6340058

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology;IEEE Microwave and Wireless Technology Letters;2024-06

2. A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process;IEEE Microwave and Wireless Technology Letters;2024-05

3. 125 - 211 GHz low noise MMIC amplifier design for radio astronomy;Experimental Astronomy;2019-08-31

4. State-of-the-Art Low-Noise Amplifiers in the Millimeter-Wave Regime;Signals and Communication Technology;2017-11-12

5. Sideband-separating MMIC receivers for observation in the 3-mm band;SPIE Proceedings;2016-07-19

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