Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process-Reference-Cited by-同舟云学术

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Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process

Published:2008-10 Issue: Volume: Page:
ISSN:1550-8781
Container-title:2008 IEEE Compound Semiconductor Integrated Circuits Symposium
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Author:

Moyer H. P.,Kurdoghlian A.,Micovic M.,Lee T.,Hiramoto R. O.,Be Zaire M. J.,Nguyen S.,Hashimoto P.,Schmitz A.,Milosavljevic I.,Willadsen P. J.,Wong W.-S.,Antcliffe M.,Wetzel M. D.,Hu M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4674454/4674455/04674481.pdf?arnumber=4674481

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A U-Band Low-Noise Amplifier MMIC in 100-nm GaN Process;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

2. 25-31-GHz Low Noise Amplifiers in 0.15-µm GaN/SiC HEMT Process;2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2022-08-29

3. Design of a broadband Ka-band MMIC LNA using deep negative feedback loop;IEICE Electronics Express;2018

4. Employing hole-array recess of barrier layer of AlGaN/GaN Heterostructures to reduce annealing Temperature of Ohmic contact;Semiconductor Science and Technology;2017-09-07

5. Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers;IEICE Transactions on Electronics;2017

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