25-31-GHz Low Noise Amplifiers in 0.15-µm GaN/SiC HEMT Process-Reference-Cited by-同舟云学术

25-31-GHz Low Noise Amplifiers in 0.15-µm GaN/SiC HEMT Process

Published:2022-08-29 Issue: Volume: Page:
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Container-title:2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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Author:

Chen Shih-Yun¹,Wu Chan-Shin²,Lee Ling-Yu¹,Chen Tzu-Hung²,Chen Yu-Min¹,Wang Huei¹

Affiliation:

1. Graduate Institution of Communication Engineering, National Taiwan University,Taipei,Taiwan

2. Ultraband Technologies, Inc.,Hsinchu,Taiwan

Funder

Academia Sinica

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9882303/9882341/09882439.pdf?arnumber=9882439

Reference10 articles.

1. A 22–30-GHz GaN Low-Noise Amplifier With 0.4–1.1-dB Noise Figure

2. A Ka-Band MMIC LNA in GaN-on-Si 100-nm Technology for High Dynamic Range Radar Receivers

3. A Broadband Multistage LNA With Bandwidth and Linearity Enhancement

4. Robust AlGaN/GaN low noise smplifier MMICs for C-, Ku- and Ka-band space applications;suijker;IEEE Compound Semiconductor Integrated Circuit Symp,2009

5. 23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology

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1. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. A 24-30 GHz MMIC Low Noise Amplifier in GaN-on-SiC 150-nm Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27