Author:
Campbell Charles F.,Dumka Deep C.,Kao Ming-Yih,Fanning David M.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity;IEEE Transactions on Electron Devices;2023-11
2. A Ka-band 4 Watt Power Amplifier MMIC Employed GaAs PHEMT Progress;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
3. A 0.5W 33%-PAE Ka-band Power Amplifier in 0.15µm GaAs;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12
4. GaN‐Based HEMTs for Millimeter‐wave Applications;Nitride Semiconductor Technology;2020-08-03