Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications-Reference-Cited by-同舟云学术

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Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Komiak James J.,Smith Phillip M.,Duh K. H. George,Xu Dong,Chao P. C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6657107/6659174/06659237.pdf?arnumber=6659237

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate;Micromachines;2022-12-25

2. A 120-160 GHz 28 mW LNA in 70-nm GaAs mHEMT Technology;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

3. Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor;Russian Microelectronics;2021-05

4. V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies;IEEE Microwave and Wireless Components Letters;2020-06

5. Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models;Electronics;2020-01-13

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