13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate-Reference-Cited by-同舟云学术

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

Published:2020-02 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Kim Doo-Hyun,Kim Hyunggon,Yun Sungwon,Song Youngsun,Kim Jisu,Joe Sung-Min,Kang Kyung-Hwa,Jang Joonsuc,Yoon Hyun-Jun,Lee Kanabin,Kim Minseok,Kwon Joonsoo,Jo Jonghoo,Park Sehwan,Park Jiyoon,Cho Jisoo,Park Sohyun,Kim Garam,Bang Jinbae,Kim Heejin,Park Jongeun,Lee Deokwoo,Lee Seonyong,Jang Hwajun,Lee Han-Jun,Shin Donghyun,Park Jungmin,Kim Jungkwan,Kim Jongmin,Jang Kichang,Park II Han,Moon Seuna Hyun,Choi Myung-Hoon,Kwak Pansuk,Park Joo-Yona,Choi Youngdon,Kim Sang-Lok,Lee Seungjae,Kang Dongku,Lim Jeong-Don,Byeon Dae-Seok,Song Kiwhan,Choi Junghwan,Hwang Sang Joon,Jeong Jaeheon

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9046640/9062887/09063053.pdf?arnumber=9063053

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