22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST-Reference-Cited by-同舟云学术

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

Published:2020-02 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Lee Dong Uk,Cho Ho Sung,Kim Jihwan,Ku Young Jun,Oh Sangmuk,Dae Kim Chul,Kim Hyun Woo,Lee Woo Young,Kim Tae Kyun,Yun Tae Sik,Kim Min Jeong,Lim SeungGyeon,Lee Seong Hee,Yun Byung Kuk,Moon Jun Il,Park Ji Hwan,Choi Seokwoo,Park Young Jun,Lee Chang Kwon,Jeong Chunseok,Lee Jae-Seung,Lee Sang Hun,We Woo Sung,Yun Jong Chan,Lee Doobock,Shin Junghyun,Kim Seungchan,Lee Junghwan,Choi Jiho,Ju Yucheon,Park Myeong-Jae,Lee Kang Seol,Hur Youngdo,Shim Daeyong,Lee Sangkwon,Chun Junhyun,Jin Kyo-Won

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9046640/9062887/09062977.pdf?arnumber=9062977

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