Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications-Reference-Cited by-同舟云学术

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Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications

Published:2017-09 Issue: Volume: Page:
ISSN:
Container-title:2017 47th European Solid-State Device Research Conference (ESSDERC)
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Author:

Ben Ali K.,Gammon P. M.,Chan C. W.,Li F.,Pathirana V.,Trajkovic T.,Gity F.,Flandre D.,Kilchytska V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8059714/8066575/08066635.pdf?arnumber=8066635

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-Event Burnout Effects of Complementary LDMOS Devices in High-Voltage Integrated Circuits;IEEE Transactions on Device and Materials Reliability;2024-09

2. A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process;IEEE Transactions on Device and Materials Reliability;2024-03

3. Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions;IEEE Transactions on Electron Devices;2024-03

4. Thermal and Electrical Study of Single-Event Burnout and Hardening in 600 V Lateral DMOSFETs With Optimized Trench Drain;IEEE Transactions on Electron Devices;2023-10

5. New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation;IEEE Transactions on Nuclear Science;2023-04

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