Characterization of Parasitics in TO-Packaged High-Speed Laser Modules
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/6040/4084580/04084584.pdf?arnumber=4084584
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Implementation of a Current Linear Regulator Based on a GaN HEMT for Laser Diode Manipulations;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
3. Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls;International Journal of Circuit Theory and Applications;2022-07-15
4. Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation;Processes;2021-11-04
5. Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor;International Journal of Circuit Theory and Applications;2021-09-28
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