Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor
Author:
Affiliation:
1. Undergraduate Program of Vehicle and Energy Engineering National Taiwan Normal University Taipei City Taiwan, ROC
2. Department of Electrical Engineering National Taiwan University of Science and Technology Taipei City Taiwan, ROC
Funder
Ministry of Science and Technology, Taiwan
Publisher
Wiley
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.3141
Reference38 articles.
1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
2. All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs
3. Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior
4. Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
5. Ultra‐fast MHz range driving circuit for SiC MOSFET using frequency multiplier with eGaN FET
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1. Implementation of a Current Linear Regulator Based on a GaN HEMT for Laser Diode Manipulations;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
2. Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls;International Journal of Circuit Theory and Applications;2022-07-15
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