Design of a novel, high-density, high-speed 10 kV SiC MOSFET module-Reference-Cited by-同舟云学术

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Design of a novel, high-density, high-speed 10 kV SiC MOSFET module

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

DiMarino Christina,Johnson Mark,Mouawad Bassem,Li Jianfeng,Boroyevich Dushan,Burgos Rolando,Lu Guo-Quan,Wang Meiyu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8085404/8095743/08096699.pdf?arnumber=8096699

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discovery of Loss Imbalance in SiC Half-Bridge Power Modules – Analysis and Validations;IEEE Transactions on Power Electronics;2024-05

2. Practical Insulation Testing of 10 kV SiC MOSFET Modules;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Parasitic Capacitive Couplings in Medium Voltage Power Electronic Systems: An Overview;IEEE Transactions on Power Electronics;2023-08

5. Partial Discharges and AC Breakdown Voltage Tests on Thick Metallized Aluminum Nitride Substrates for High Voltage Power Modules;2023 IEEE Electrical Insulation Conference (EIC);2023-06-18

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